发明名称 |
Application of Power semiconductor device with monolithically integrated sense device |
摘要 |
The power semiconductor component includes a load transistor (LT) together with which two further transistors (ST1, ST2) and two resistors (R1, R2) are monolithically integrated. A series circuit of the transistor (ST1) and the resistor (R1), together with the load transistor form a current mirror. A measurement voltage (U1) is applied to the resistor (R1). A second series circuit of the second further transistor (ST2) and the second resistor (R2) together with the load transistor form a second current mirror. A second measuring voltage (U2) is applied to the second resistor (R2). |
申请公布号 |
EP0704902(B1) |
申请公布日期 |
2002.12.04 |
申请号 |
EP19950114638 |
申请日期 |
1995.09.18 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HIEROLD, CHRISTOFER, DR.;SCHWARZBAUER, HERBERT, DR. |
分类号 |
H01L21/822;H01L27/02;H01L27/04;H01L29/78;(IPC1-7):H01L27/02 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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