| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature measurement device and a temperature measurement method using it capable of directly measuring the temperature of a wafer in a manufacturing process of a semiconductor device using vacuum or low-pressure plasma, and obviating the need to install a special facility in a process device without being affected by high-frequency noise caused by the plasma or heat generation caused by a plasma active reaction, and without generating particles or metal pollution in the measurement. SOLUTION: Plural rectangular-solid thin film structures 2 formed of positive type photoresist and having a width of 200μm, a length of 500μm and a thickness of 1,000 nm are mounted on a base material 1 formed of a silicon wafer, and a lid body 3 is mounted on the base material 1 through a cushioning film 4. On the back surface of the lid body 3, recessed parts 3a each having a length of 3 mm, a width of 3 mm and a depth of 50μm are formed at positions matching to the structures 2. Since the shape of each structure 2 is irreversibly changed depending on temperature, the temperature can be measured by measuring the film thickness of the structure 2. |
