发明名称 CRYSTAL GROWTH DEVICE AND METHOD
摘要 The device according to invention comprises an ampoule (4) at the bottom of a crucible (3) for crystal growing by progressive solidification of a liquid, and a specific means of heating (9) to adjust the temperature of the volume of this gas pocket and establish an overpressure at the bottom of the crucible compared to the top in order to ensure a contraction of the crystal (2) at the moment of its solidification and to avoid defects in the crystals. By eliminating a pressure regulating circuit linking these two extreme regions in order to establish the overpressure directly, the lay out is considerably simplified and at the same time avoids condensations of the vaporised portions of the crystal in the pipes.
申请公布号 EP1261760(A1) 申请公布日期 2002.12.04
申请号 EP20010913972 申请日期 2001.03.09
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE;CENTRE NATIONAL DE RECHERCHES DE SPACIALES 发明人 DUFFAR, THIERRY;DUSSERRE, PIERRE;GIACOMETTI, NATHALIE
分类号 C30B11/00;C30B29/48 主分类号 C30B11/00
代理机构 代理人
主权项
地址