| 摘要 |
<p>A semiconductor laser includes a substrate; and a multilayered film (2,3,4,5,7,8,9,10) formed on the substrate (1) and including an active layer (3). The multilayered film includes a stripe structure (6) that extends in a longitudinal direction of a resonator and has a tapered portion (B) in which a width of a stripe changes in a tapered manner; and a first side face (30a) and a second side face (30b) that sandwich the stripe structure (6). At least one side face of the first side face and the second side face is inclined with respect to a principal surface of the substrate (1). <IMAGE></p> |
