发明名称 |
METHOD FOR MAKING GROUP III NITRIDE THIN MEMBRANE |
摘要 |
PROBLEM TO BE SOLVED: To control the polarity of a GaN-based group III nitride thin membrane to (0001). SOLUTION: After irradiating the sapphire C surface 28 of a sapphire substrate 21 with nitrogen ion and forming an AlN layer, a GaN-based group III nitride thin membrane is formed on the surface of the AlN layer. The GaN- based group III nitride thin membrane (0001) is grown, if the surface of the AlN layer is clean. |
申请公布号 |
JP2002348199(A) |
申请公布日期 |
2002.12.04 |
申请号 |
JP20010160139 |
申请日期 |
2001.05.29 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
SONODA SAKI;SHIMIZU SABURO |
分类号 |
C30B29/38;H01L21/203;H01L33/32;H01S5/323 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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