| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive type resist composition, which is suitably used in microphoto fabrication using far ultraviolet ray, particularly ArF excimer laser beam and has excellent exposure margin and in which the generation of development defects is reduced. SOLUTION: The positive type resist composition contains (A) a resin which has a specific alicyclic hydrocarbon group and in which the dissolution rate to an alkali developer is increased by the action of an acid, and (B) a compound having a specific structure to generate an acid by the irratidation with active ray or radiation. |
