Method of forming a capacitor with high capacitance and low voltage coefficient

摘要

The present invention provides a method of forming a capacitor in an integrated circuit. The method comprises providing a semiconductor substrate having a conductive layer thereon. The partial conductive layer is removed to form an electrode. A plurality of first dopants are implanted on a surface of the electrode to form a first doped region. Then a plurality of second dopants are implanted into the electrode to form a second doped region below the first doped region. Then the capacitor is formed comprising the electrode. The first doped region and the second region can reduce voltage coefficient as well as increase capacitance of the capacitor.