发明名称 |
Angled implant process |
摘要 |
Different symmetrical and asymmetrical devices are formed on the same chip using non-critical block masks and angled implants. A barrier is selectively formed adjacent one side of a structure and this barrier blocks dopant implanted at an angle toward the structure. Other structures have no barrier or have two barriers. Source and drain engineering can be performed for LDD, halo, and other desired implants.
|
申请公布号 |
US6489223(B1) |
申请公布日期 |
2002.12.03 |
申请号 |
US20010898949 |
申请日期 |
2001.07.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOOK TERENCE B.;MANN RANDY W. |
分类号 |
H01L21/265;H01L21/336;H01L21/8234;H01L29/78;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|