发明名称 |
Process for observing overlay errors on lithographic masks |
摘要 |
A method of observing overlay errors associated with two masks or reticles includes providing alignment marks to a substrate. The alignment marks can be observed to determine overlay errors. In one embodiment, the lightness or darkness of the alignment marks can indicate an overlay error. The technique can be utilized in any photolithographic system including an EUV, VUV, DUV or conventional patterning device.
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申请公布号 |
US6489068(B1) |
申请公布日期 |
2002.12.03 |
申请号 |
US20010790135 |
申请日期 |
2001.02.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KYE JONGWOOK |
分类号 |
G03F7/20;(IPC1-7):G03F9/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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