发明名称 |
Programming and erasing methods for a reference cell of an NROM array |
摘要 |
A method for programming a reference cell of a memory array includes the steps of programming the reference cell with large programming steps until a threshold voltage level of the reference cell is above an interim target level and programming said reference cell with small programming steps until the threshold voltage level is above a final target level.
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申请公布号 |
US6490204(B2) |
申请公布日期 |
2002.12.03 |
申请号 |
US20010827596 |
申请日期 |
2001.04.05 |
申请人 |
SAIFUN SEMICONDUCTORS LTD. |
发明人 |
BLOOM ILAN;MAAYAN EDUARDO;EITAN BOAZ |
分类号 |
G11C16/02;G11C11/56;G11C16/04;G11C16/10;G11C16/14;G11C16/28;G11C16/34;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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