Memory cell configuration, magnetic ram, and associative memory

摘要

A memory cell configuration has word lines and bit lines that extend transversely with respect thereto. Memory elements with a giant magnetoresistive effect are respectively connected between one of the word lines and one of the bit lines. The bit lines are each connected to a sense amplifier by means of which the potential on the respective bit line can be regulated to a reference potential and at which an output signal can be picked off. The memory cell configuration can be used both as an MRAM and as an associative memory.