发明名称 |
Semiconductor memory device and refreshing method of semiconductor memory device |
摘要 |
A semiconductor memory device that suppresses an increase in the circuit area which is originated from the layout of address signal lines. The semiconductor memory device includes refresh address counters, a switch circuit, and address holding circuits. The refresh address counters generate refresh address signals associated with banks in response to a refresh request signal. The switch circuit selectively outputs the external address signal and a refresh address signal generated by one of the refresh address counters in accordance with the refresh request signal. Each of the address holding circuits holds the refresh address signal or the external address signal output from the switch circuit and supplies the held address signal to an associated one of the banks.
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申请公布号 |
US6490215(B2) |
申请公布日期 |
2002.12.03 |
申请号 |
US20010861545 |
申请日期 |
2001.05.22 |
申请人 |
FUJITSU LIMITED |
发明人 |
KOMURA KAZUFUMI;FURUYAMA TAKAAKI;KAWAMOTO SATORU |
分类号 |
G11C11/406;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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