发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.
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申请公布号 |
US6489181(B2) |
申请公布日期 |
2002.12.03 |
申请号 |
US20010897408 |
申请日期 |
2001.07.03 |
申请人 |
HITACHI, LTD.;HITACHI HOKKAI SEMICONDUCTOR, LTD. |
发明人 |
KADO YOSHIYUKI;FUNAKI TSUKIO;KIKUCHI HIROSHI;YOSHIDA IKUO |
分类号 |
H01L25/18;H01L21/60;H01L23/498;H01L23/528;H01L25/04;H01L27/14;(IPC1-7):H01L21/48 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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