发明名称 Method of manufacturing a semiconductor device
摘要 Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.
申请公布号 US6489181(B2) 申请公布日期 2002.12.03
申请号 US20010897408 申请日期 2001.07.03
申请人 HITACHI, LTD.;HITACHI HOKKAI SEMICONDUCTOR, LTD. 发明人 KADO YOSHIYUKI;FUNAKI TSUKIO;KIKUCHI HIROSHI;YOSHIDA IKUO
分类号 H01L25/18;H01L21/60;H01L23/498;H01L23/528;H01L25/04;H01L27/14;(IPC1-7):H01L21/48 主分类号 H01L25/18
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