| 摘要 |
A semiconductor laser is fabricated on a substrate having a laser section and a modulator section by forming a light waveguide having an active layer that extends across the laser section and the modulator section from a high reflectivity end portion to a low reflectivity end portion. The light waveguide is enclosed by an embedding structure in which first and second high resistance regions are produced on the opposite sides of the light waveguide for confining electrons between the high resistance regions. On the embedding structure are first and second contact regions corresponding respectively to the laser section and the modulator section. Portions of the substrate other an the first and second elongated contact regions are covered with an insulating layer. First and second electrodes are formed on the insulating layer for establishing ohmic contact with the first and second elongated contact regions, respectively.
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