| 摘要 |
A magnetoresistive memory is described and contains a common word line voltage source, bit lines, word lines crossing the bit lines, and a memory cell array having memory cells with cell resistors. The memory cell array further has reference cells with reference cell resistors. The memory cell array is configured such that for testing a respective cell resistor in each case two of the reference cell resistors nearest the respective cell resistor and the reference cell are simultaneously connected to a common word line voltage. A first feedback amplifier together with the two reference cell resistors form a summing amplifier. A second feedback amplifier together with the respective cell resistor form an amplifier having an equivalent gain as the summing amplifier. A comparator is connected to the summing amplifier and the amplifier. The comparator has an output supplying an evaluation signal dependent on the respective cell resistor.
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