Digital memory method and system for storing multiple bit digital data

摘要

A digital memory array includes memory cells having respective anti-fuse layers. Write signals that vary in at least one of current, voltage, and pulse length are applied to selected ones of the memory cells to disrupt the respective anti-fuse layers to differing extents, thereby programming the selected memory cells with resistances that vary in accordance with the degree of anti-fuse layer disruption. The state of a selected memory cell is read by applying a voltage across the cell and comparing the resulting read signal with two or more thresholds, thereby reading more than one bit of digital data from each memory cell.