发明名称 |
Method of making a semiconductor device |
摘要 |
A method of making a semiconductor device includes the steps of etching, with a resist pattern (3) used as a mask, a contact pattern (4) in at least one interlayer insulation film (2) made on a silicon substrate (1); forming on the contact pattern an insulation film (5) containing silicon as a main component; and oxidizing by heat treatment the insulation film to provide an oxide film (6) including a side wall oxide film on an inside wall of the contact pattern.
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申请公布号 |
US6489234(B1) |
申请公布日期 |
2002.12.03 |
申请号 |
US20000664764 |
申请日期 |
2000.09.19 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ITOH YOSHIO |
分类号 |
H01L21/302;H01L21/28;H01L21/3065;H01L21/311;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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