发明名称 |
Semiconductor device with improved heat suppression in peripheral regions |
摘要 |
A semiconductor device (102) comprises an N type semiconductor substrate (1). A P layer (22) is formed in a first surface (S1) of the semiconductor substrate (1), and a P layer (23) is formed in the semiconductor substrate (1) and in contact with the first surface (S1) and a second surface (S2) of the semiconductor substrate (1) corresponding to a beveled surface. The P layer (23) surrounds the P layer (22) in non-contacting relationship with the P layer (22). A separation distance (D) between the P layers (22, 23) is set at not greater than 50 mum. A distance (D23) between a third surface (S3) of the semiconductor substrate (1) and a portion of the P layer (23) which is closer to the third surface (S3) is less than a distance (D22) between the third surface (S3) and a portion of the P layer (22) which is closer to the third surface (S3). An N++ layer (24) is formed in part of the third surface (S3) which is substantially opposed to the P layer (22), and an N+ layer (25) is formed in contact with the N++ layer (24) and the third surface (S3). A cathode electrode (33) is formed on the third surface (S3) so as to cover a region (S322) of the third surface (S3) which is opposed to the P layer (22). The semiconductor device (102) suppresses heat generation to perform a stable operation.
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申请公布号 |
US6489666(B1) |
申请公布日期 |
2002.12.03 |
申请号 |
US20000624998 |
申请日期 |
2000.07.25 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMAGUCHI YOSHIHIRO;SATOH KATSUMI;HIRANO NORITOSHI |
分类号 |
H01L29/06;H01L29/861;(IPC1-7):H01L29/06;H01L23/58;H01L23/93 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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