发明名称 |
Process for device isolation |
摘要 |
A novel process for isolating devices on a semiconductor substrate is disclosed. An isolation layer is first formed over the semiconductor substrate and patterned into at least two isolation mesas on the substrate. Next, a blanket semiconductor layer is formed over the substrate with a thickness sufficient to cover the isolation mesas. The semiconductor layer is subjected to planarization until the isolation mesas are exposed, thus resulting in a semiconductor region between the two isolation mesas to serve as an active region for semiconductor devices.
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申请公布号 |
US6489193(B1) |
申请公布日期 |
2002.12.03 |
申请号 |
US20020040442 |
申请日期 |
2002.01.09 |
申请人 |
SILICON INTEGRATED SYSTEMS CORP. |
发明人 |
CHEN LUNG;WANG TENG-FENG;YANG ZEN-LONG;CHANG SHIH-HUI;WANG YUNG-SHIN |
分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L21/823;H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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