| 摘要 |
PURPOSE: A high-power laser diode is provided to increase the size of a beam spot by forming a separate waveguide layer between clad layers over an active layer. CONSTITUTION: A first clad layer(21), an active layer(22), a second clad layer(23), a separate waveguide layer(24), a third clad layer(25), and a cap layer(26) are sequentially deposited on a substrate(20) through an LPE(Liquid Phase Epitaxy) having a higher heat characteristic than an MOCVD(Metal Organic Chemical Vapor Deposition). These layers form a double heterostructure. A mesa structure is formed by selectively etching the cap layer(26), the third clad layer(25), the separate waveguide layer(24), and a second clad layer(23) through a photolithography. A current limiting layer is formed on both laterals of the mesa structure through the MOCVD.
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