发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE: A semiconductor laser is provided to increase the output of laser by adding a cylindrical gain medium to a Fabry-Perot laser. CONSTITUTION: A first conductive-type clad layer(11) is formed on a first conductive-type substrate. An active layer(12) is formed by making a layered linear gain medium formed on the first conductive-type clad layer(11) and at least one cylindrical gain medium overlapped. A second conductive clad layer(13) is formed on the first conductive-type clad layer(11) and an upper portion of the active layer(12). The active layer(12) is comprised of a quantum well. The active layer(12) is comprised of the linear gain medium and the cylindrical gain medium layered with the linear gain medium in a central part of the linear gain medium.
申请公布号 KR100364772(B1) 申请公布日期 2002.12.02
申请号 KR19950005637 申请日期 1995.03.17
申请人 LG ELECTRONICS INC. 发明人 CHOI, SEONG CHEON
分类号 H01S5/30;(IPC1-7):H01S5/30 主分类号 H01S5/30
代理机构 代理人
主权项
地址