| 摘要 |
PURPOSE: A copper wiring formation method of semiconductor devices is provided to improve a reliability due to EM(Electro Migration) or SM(Stress Migration) and to reduce a resistance by using two-step RTP(Rapid Thermal Processing). CONSTITUTION: A lower metal wiring(22) is formed on a semiconductor substrate(21). After forming an interlayer dielectric(23) on the resultant structure, a contact hole is formed to expose the lower metal wiring(22) by selectively removing the interlayer dielectric(23) using dual damascene processes. After depositing a barrier metal film(25) and a copper film on the contact hole, a copper wiring(26a) is formed in the contact hole. At this time, a copper oxide layer(27) is grown on the copper wiring(26a). The copper oxide layer(27) is then removed by two-step RTP using hydrogen gas and nitrogen gas atmospheres, respectively. A capping layer is then formed on the resultant structure.
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