| 摘要 |
PURPOSE: An organo fluorosilicate glass film and its preparation method by CVD (chemical vapor deposition) are provided, wherein the film has a low dielectric constant and can be applied for various uses in electronics. CONSTITUTION: The organo fluorosilicate glass film is represented by SivOwCxHyFz, wherein v+w+x+y+z is 100%, v is 10-35 atomic%, w is 10-65 atomic%, y is 10-50 atomic%, x is 2-30 atomic%, z is 0.1-15 atomic% and practically none of the fluorine atom is bonded to the carbon atom. Preferably x/z is greater than 0.25. The method comprises the steps of providing a substrate within a vacuum chamber; introducing into the vacuum chamber the gaseous reagents comprising a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from the group consisting of an organosilane and an organosiloxane; and applying energy to the gaseous reagents in the chamber to induce the reaction of the gaseous reagents and to form the film on the substrate.
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