METHOD FOR FORMING METAL CONDUCTING LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal conducting layer of semiconductor devices is provided to prevent a short of metal interconnections by improving a step coverage of bottom and sidewall of a contact hole. CONSTITUTION: A lower conductive layer(10) and an interlayer dielectric(12) are sequentially formed on a wafer(1). A contact hole is formed to expose the lower conductive layer(10) by selectively etching the interlayer dielectric. After removing moisture in the contact hole and the interlayer dielectric, a metal contact film(20) is formed in the contact hole. A first metal film(22) and a second metal film(24) are sequentially formed on the metal contact film(20). An anti-reflective pattern(26) is then formed on the resultant structure.