METHOD FOR FABRICATING FIELD EMISSION DISPLAY DEVICE

摘要

PURPOSE: A method for fabricating a field emission display device is provided to increase the amount of current and lower the amount of operating current by maximizing an emitting area. CONSTITUTION: A sacrificial layer is deposited on a silicon substrate(10). A cross type sacrificial layer is formed by patterning the sacrificial layer. The silicon substrate(10) is etched by using the cross type sacrificial layer as an etch mask. A field emission tip material layer is formed on a whole surface of the silicon substrate(10). A silicon oxide as a gate insulating layer(16) is deposited on the whole surface of the silicon substrate(10) including the sacrificial layer. A metal layer as a gate(18) is deposited on thereon. The gate insulating layer(16) and the gate(18) are formed by patterning the metal layer and the silicon oxide. A side-wall type field emission tip(14) is formed by removing the sacrificial layer, the gate insulating layer(16), and the gate(18).