| 摘要 |
PURPOSE: A method for fabricating poly silicon thin film transistors and a liquid crystal display device employing the same are provided to realize the control of nickel deposition by a very small amount for increasing the size of crystal particles and preventing the reject by the remaining nickel. CONSTITUTION: A method for fabricating poly silicon thin film transistors includes the steps of depositing amorphous silicon to a substrate(110), depositing a catalyst metal such as nickel on the amorphous silicon and carrying out etching to remain a very small amount of the catalyst metal by plasma treatment, crystallizing the amorphous silicon to poly silicon by using the remaining catalyst metal as a seed, forming a semiconductor layer(113) by patterning the poly silicon, forming gate electrodes(116) at predetermined portions of the semiconductor layer to be insulated from the semiconductor layer, forming source/drain areas(113a,113b) by ion implantation for the semiconductor layer, and forming source/drain electrodes(119,120) connected to the source/drain areas.
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