发明名称 Ionising radiation detection - comprises use of dosimeter with MOSFET transistor with floating gate, with ionising radiation affecting surface of gate through open air or gas space, etc.
摘要 <p>Detecting ionising radiation comprises use of a dosimeter which incorporates a MOSFET transistor (10) provided with a floating gate (13).The ionizing radiation is allowed to affect the surface of the floating gate (13) of MOSFET transistor (10) through an open air or gas space or a closed air or gas space (24). For this purpose, an uncovered area (17) is formed on the surface of floating gate (13), or there is an area covered by a conductor, semiconductor or insulator. Also claimed is an ionising radiation detector/dosimeter comprising a MOSFET transistor (10) provided with a floating gate (13). A part of the surface of gate (13) is uncovered, or covered by a conductor, semiconductor or thin insulator. The floating gate surface is located in an open air or gas space or closed air or gas space.</p>
申请公布号 FI110144(B) 申请公布日期 2002.11.29
申请号 FI19960001789 申请日期 1996.04.26
申请人 RADOS TECHNOLOGY OY, 发明人 KAHILAINEN,JUKKA
分类号 G01T1/02;A61B6/00;G01T;G01T1/24;H01L27/14;H01L31/09;H01L31/10;H01L31/119;(IPC1-7):G01T1/24 主分类号 G01T1/02
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