| 摘要 |
PURPOSE: An irrotational-type thin film formation apparatus is provided to minimize a generation of fine dusts and turbulence due to rotation by arranging a plurality of ports for spraying and exhausting gas to wafer around instead of a rotational axis. CONSTITUTION: The irrotational-type thin film formation apparatus comprises a semiconductor substrate(10), a plurality of gas spray ports(11-a,11-b,11-c) arranged same distance around of the substrate(10), a plurality of gas exhaust ports(12-a,12-b,12-c) arranged same distance between the gas spray ports, and a reaction tube(13). Instead of rotation of the wafer, the gas spray ports(11-a,11-b,11-c) and the gas exhaust ports(12-a,12-b,12-c) corresponding to the gas spray ports(11-a,11-b,11-c) are sequentially operated according to the around of the semiconductor substrate(10), thereby improving a uniformity of deposited thin film.
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