| 摘要 |
PROBLEM TO BE SOLVED: To provide a porous silicon substrate, having a porous silicon layer whose light-emitting efficiency is high and whose light emission intensity is large, and to provide a light-emitting element using the porous silicon substrate and a method for manufacturing the porous silicon substrate. SOLUTION: A porous silicon layer 3, whose thickness is about 12 μm formed with a plurality of fine holes 2, is formed on a p-type monocrystal silicon substrate 1. An impurity diffusion silicon layer 4 which includes phosphorous element (P) as impurity is formed along the wall face inside the hole 2 of the porous silicon layer 3. Therefore, a p-n junction is formed along the hole 2 of the porous silicon layer 3 so that since the area of the p-n junction per unit area in the silicon substrate 1 can be substantially increased, a highly efficient light-emitting element is realized. |
