SINGLE ELECTRONIC MEMORY ELEMENT COMPRISING QUANTUM POINT BETWEEN GATE ELECTRODE AND SINGLE ELECTRONIC STORAGE ELEMENT, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a single electronic memory element together with its manufacturing method wherein a sufficient time for appropriately holding information is assured while an element is prevented from degrading in characteristics, when a quantum point or an element having an effect similar to it is formed. SOLUTION: The single electronic memory element comprises a substrate where a channel region of nano scale is formed between a source and a drain, and a gate lamination pattern comprising a quantum point in the channel region. The gate lamination pattern is a single electronic memory element comprising a lower part layer formed in the channel region, a single electronic storage medium in which, formed on the lower part layer, a single electron tunneling the lower part layer is accumulated, an upper part layer which is formed on the single electronic storage medium and comprises a quantum point, and a gate electrode which is so formed on the upper part layer as to contact the quantum point.