| 摘要 |
<p>PROBLEM TO BE SOLVED: To resolve the problem of insufficient field-emitted electron and low luminous intensity in a conductive substrate and a donor-doped nitride semiconductor film layer grown on the conductive substrate. SOLUTION: The conductive substrate 1 is an n-type [0001] plane direction SiC substrate, and the donor-doped nitride semiconductor film layer 10 is an AIN added with Si of a concentration of 5×10<21> cm<-3> . A transparent electrode 4 is provided on a part of an AIN 10 surface so as to face the AIN 10 surface with an insulation spacer 5 sandwiched in between. A phosphor 3 is applied on the transparent electrode 4, and the AIN 10 and a face applied with the phosphor 3 are provided so as to face each other. At operation, a positive voltage is applied to the transparent electrode 4 and a negative voltage is applied to the conductive substrate 1. Electrons are emitted from the surface of the AIN layer 10 surface to the transparent electrode 4, they excite the phosphor 3, and light is emitted. The emitted light can be extracted to the outside through the transparent electrode 4.</p> |
