发明名称 WAFER LEVEL TUNING METHOD AND SYSTEM FOR BULK ACOUSTIC WAVE RESONATOR AND FILTER
摘要 PROBLEM TO BE SOLVED: To provide a method and system for realizing a desired resonance frequency of a bulk acoustic wave device within a given tolerance range. SOLUTION: The wafer level tuning method and system for a bulk acoustic wave resonator and a filter includes a step of providing an etching medium on the surface layer at one position, in order to adjust the thickness of at least one position of the surface layer locally all at once, a step of rearranging the etching medium at another position of the surface layer in the device, in order to adjust the thickness of at least another position of the surface layer, and a repeating step of the rearrangement, when at least another remaining position of the surface layer needs adjusting of the thickness.
申请公布号 JP2002344271(A) 申请公布日期 2002.11.29
申请号 JP20020124693 申请日期 2002.04.25
申请人 NOKIA CORP 发明人 TIKKA PASI;ELLA JUHA;KAITILA JYRKI
分类号 H03H3/013;H03H3/02;H03H3/04;H03H9/17;(IPC1-7):H03H3/04 主分类号 H03H3/013
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