发明名称 HIGH-FREQUENCY SEMICONDUCTOR CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce the influence between differential amplifiers due to wire (inductor), even if the amplitude or phase difference is produced in a differential input signal and a high-frequency displacement current flows to a grounding terminal in differential amplifiers being connected in a plurality of stages. SOLUTION: In the high-frequency semiconductor integrated circuit, having differential amplifiers 6, 7, and 8 which are connected in a plurality of stages, the common emitter of a differential amplifier 8 at least at the final stage is grounded, without going through constant current sources 9 and 10, and an independent grounding terminal 13 is used separately from other grounding terminals 12.
申请公布号 JP2002344262(A) 申请公布日期 2002.11.29
申请号 JP20010148000 申请日期 2001.05.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUGANO TAKAYUKI;SHINJO SHINTARO;SUEMATSU KENJI;NAKAJIMA KENSUKE;ONO MASAYOSHI
分类号 H03F3/45;H03F3/68;(IPC1-7):H03F3/45 主分类号 H03F3/45
代理机构 代理人
主权项
地址