| 摘要 |
PURPOSE: A metal interconnection formation method of semiconductor devices is provided to prevent a bridge and a corrosion of metal interconnections by forming an amorphous layer between an ARC(Anti Reflective Coating) layer and a photoresist pattern. CONSTITUTION: A glue layer(110), a metal film(120), an ARC layer(130) and an amorphous layer(140) are sequentially formed on a semiconductor substrate(100). After etching selectively the amorphous layer(140) using a photoresist pattern, a metal interconnection is formed by sequentially etching the ARC layer(130), the metal film(120) and the glue layer(110) using the photoresist pattern as a mask. After cleaning the resultant structure, the photoresist pattern is then removed. The amorphous layer(140) is formed on the ARC layer(130) by plasma method using silicon oxide.
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