| 摘要 |
PROBLEM TO BE SOLVED: To improve a withstand voltage in a peripheral region without enlarging the area of the peripheral region and also without thickening a drift layer. SOLUTION: A layer 8 of an opposite conductivity type is added to the drift layer 10. Consequently, a structure is obtained wherein a depletion layer stretches from at least two junction surfaces, and distribution of electric field intensity is made uniform in the depthwise direction of the semiconductor device. As a result, a large peak of electric field intensity is not generated in a specified depth, and the withstand voltage in the peripheral region can be improved without increasing an ON voltage in a central region and enlarging the area of the peripheral region. |
