| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation system, capable of injecting a large amount of desired polyvalent ions or molecular ions. SOLUTION: The polyvalent ions, generated by an ion generator 2, are irradiated to a silicon wafer 6 through a post-acceleration tube 4 for accelerating the ions in an electric field formed between the electrodes. Vacuum pumps 11 and 13 are disposed in an ion passage 8, constituting an ion entrance side passage with respect to the post-acceleration tube 4 and an injection chamber 5 constituting the ion exist side passage. Guide plates 12 and 14, for conducting evacuation from a region where the level of vacuum is locally low inside of the post-acceleration tube 4 to be vacuum pumps 11 and 13, are placed inside of the above members 8 and 5 at a position which will not obstruct the ion orbit.
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