| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is resistant against the invasion of impurity from a hot carrier and a gate and has high reliability and a high integration degree. SOLUTION: A gate insulating film 2, a lower gate electrode 3, an upper gate electrode 4 and a gate upper protection film 5 are formed on an Si substrate 1. Then, an LDD layer 6, a nitride film sidewall 7 and a source/drain area 8 are formed. An interlayer insulating film 10 is deposited on a substrate, and a hole which passes through the interlayer insulating film 10 and the gate upper protection film 5 and reaches the upper gate electrode 4 is formed. Then, a barrier metal film 25 formed of Ti/TiN is formed on the hole and the interlayer insulating film 10. A hole for gate contact and a hole for dummy contact are provided. When impurities are activated by RTA, the outer diffusion of hydrogen is promoted and stress is suppressed. When a sintering processing is performed, a fixed level and a damage layer are effectively restored.
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