发明名称 |
METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT USING MAGNESIUM FLUORIDE AS INSULATING LAYER |
摘要 |
PURPOSE: A method for manufacturing a magnetic tunnel junction element using magnesium fluoride as an insulating layer is provided to improve tunnel magnetic character by improving insulation character, reduce complex oxidation process. CONSTITUTION: In manufacturing an MTJ(Magnetic Tunnel Junction) including a first electrode, a second electrode, and an insulating layer arranged between the first electrode and the second electrode, a method for manufacturing a magnetic tunnel junction element includes the steps of vapor depositing magnesium and pouring fluoric gas without plasma or directly vapor depositing magnesium fluoride to form an insulating layer.
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申请公布号 |
KR20020088441(A) |
申请公布日期 |
2002.11.29 |
申请号 |
KR20010026883 |
申请日期 |
2001.05.17 |
申请人 |
LEE, JI HYUN;YOON, CHONG SEUNG |
发明人 |
JANG, PIL JAE;KIM, CHANG GYEONG;LEE, JI HYUN;YOON, CHONG SEUNG |
分类号 |
G11B5/39;(IPC1-7):G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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