发明名称 METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT USING MAGNESIUM FLUORIDE AS INSULATING LAYER
摘要 PURPOSE: A method for manufacturing a magnetic tunnel junction element using magnesium fluoride as an insulating layer is provided to improve tunnel magnetic character by improving insulation character, reduce complex oxidation process. CONSTITUTION: In manufacturing an MTJ(Magnetic Tunnel Junction) including a first electrode, a second electrode, and an insulating layer arranged between the first electrode and the second electrode, a method for manufacturing a magnetic tunnel junction element includes the steps of vapor depositing magnesium and pouring fluoric gas without plasma or directly vapor depositing magnesium fluoride to form an insulating layer.
申请公布号 KR20020088441(A) 申请公布日期 2002.11.29
申请号 KR20010026883 申请日期 2001.05.17
申请人 LEE, JI HYUN;YOON, CHONG SEUNG 发明人 JANG, PIL JAE;KIM, CHANG GYEONG;LEE, JI HYUN;YOON, CHONG SEUNG
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项
地址