发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To transmit a high-speed signal between respective semiconductor elements without being affected by crosstalk noise in an MCP type semiconductor device having a chip-on-chip structure. SOLUTION: A wiring layer 8B compound of a flat solid layer made of a conductive material is arranged between a plurality of semiconductor elements 2A and 2B laminated by flip-chip bonding. The layer 8B is connected to grounding terminals 8C of the elements 2A and 2B or to a power source terminal.
申请公布号 JP2002343930(A) 申请公布日期 2002.11.29
申请号 JP20010146672 申请日期 2001.05.16
申请人 FUJITSU LTD 发明人 TANIGUCHI FUMIHIKO;TAKASHIMA AKIRA
分类号 H01L23/12;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/12
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