| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light-emitting device, in which peeling off of an n-type electrode is not caused due to thermal strains. SOLUTION: This nitride-based semiconductor light-emitting device has a light-emitting element, composed of a multilayered nitride-based semiconductor film 102 on an n-type GaN substrate 101, in a state with the substrate 101 side of the element being fixed to the mounting surface of the substrate, and the device also has a metal layer 105 containing a first metal composed of one kind of metal selected from among Hf, Zr, and Sc and a second metal composed of either of Al or Ag, and an ohmic electrode 106 composed of the second metal on the surface of the substrate 101 opposite to the film 102. |
