| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a ferromagnetic tunnel junction element, which is much improved in quality by realizing an optimal reaction condition, when an interface layer is turned to a high-resistance layer through a reactive gas treatment. SOLUTION: By using a high-resistance film is formed by the use of radiation for heating to obtain this ferromagnetic tunnel junction element, radiation for heating is used to obtain a high-resistance film, so that the reaction of active gas on an interface layer can be activated; while being limited to the surface layer and its vicinity, the high-resistance film can be improved in the directional uniformity of film quality and chemical bonding condition, and excessive reaction and diffusion of reactive gas are restrained at the same time, so that a ferromagnetic tunnel junction element of high quality is obtained.</p> |
