| 摘要 |
PROBLEM TO BE SOLVED: To restrain fluctuation of a threshold voltage of a PMOS semiconductor element by obstructing diffusion of boron atoms to a silicon semiconductor substrate. SOLUTION: This method contains a process for forming an oxide film 11 on a surface of a semiconductor substrate 10; a process wherein nitrogen gas is supplied in which nitrogen element and at most 5% of hydrogen element are contained, and the oxide film 11 is nitrided by irradiation of electromagnetic waves; and a process wherein silicon material gas in which silicon element and at most 5% of hydrogen element are contained, and nitrogen gas in which nitrogen element and at most 5% of hydrogen element are contained are supplied, and a silicon nitride film 12 is formed on the oxide film 11 by irradiation of electromagnetic waves.
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