TREATMENT METHOD OF SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To reduce an aggregate comprising a particle and an organic matter caused by a polishing process. SOLUTION: This treatment method of silicon wafers includes a polishing process 12 for polishing the surface of a wafer where chemical etching treatment 11 is performed by polishing liquid containing a polishing particle, a first washing process 17 for washing the surface of the wafer by first washing liquid containing hydrogen peroxide and ammonium hydroxide, and a second washing process 18 for washing the surface of the wafer by second washing liquid containing the hydrogen peroxide and diluted hydrochloric water acid. The treatment method should include a pretreatment washing process 16 for washing the wafer by third washing liquid containing an amine-based compound or the amine-based compound and a surface-active agent.