| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory element and a manufacturing method thereof capable of reducing a load in an etching process for a storage electrode and a plate electrode, and capable of realizing higher integration of a ferroelectric capacitor module. SOLUTION: The manufacturing method includes a step where seed layers 38a and 38b and a sacrifice film are sequentially formed on a semiconductor substrate 31, a step where the sacrifice film is selectively etched to form a center pattern and an annular pattern, a step where first and second electrodes 40a and 40b are formed on the seed layers 38a and 38b exposed in the pattern, a step where, after the sacrifice film is removed, the seed layers 38a and 38b in the region except for the exposed first and second electrode parts are etched and removed, and a step where a ferroelectric film 41 is formed over the entire surface comprising the first and second electrodes 40a and 40b.
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