| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing equipment which can secure the uniformity of plasma density over the entire wafer to be processed by including a device which is provided in a chamber, wherein a process of manufacturing a semiconductor element by using plasma is carried out and converges the plasma by narrowing down a plasma area formed more adjacently to the processed object than the plasma area formed at the upper stage of the chamber. SOLUTION: The length of an insulating plate 120 arranged at the upper stage part of the camber opposite to a lower electrode 126 where the processed object is positioned is made longer than the length of the lower electrode 126, and a limit film 122 extending from the insulating plate 120 is extended toward the lower electrode at an acute angle to the insulating plate 120 to converge the plasma. When the insulating plate is in a dome shape, the radius of curvature of a part adjacent to the limit film is made smaller than the radius of curvature of the center part of the dome, thereby converging the plasma. |
