| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a mesa-type semiconductor device which is used for various electrical apparatus with low leakage currents. SOLUTION: A process for irradiating a mesa-side face with a laser beam 111 is added between a process for accumulating a passivation film 18 on a mesa-structure on a wafer formed by etching and a process for forming an electrode 19 covering the passivation film. After the mesa-side face has been interrupted from atmosphere by the passivation film 18, the mesa-side face is irradiated with the laser beam before the electrode 19 opaque to the laser beam is formed, and the laser beam can reach the boundary between the mesa- side face and the passivation film; and substances or structures being the factor for leakage currents can be decomposed, and to reduce the leak currents.
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