| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacity of a semiconductor element driven by using the junction of a different conductive type and to prevent the deterioration of the RF characteristic of a semiconductor device. SOLUTION: A non-doped GaAs buffer layer 2 is installed on the semi- insulating GaAs substrate of single crystal as the protection diode of pn junction, and an n-type impurity diffusion area 4 is arranged on the part of the diffusion area 3. Only the outermost layer where p-type impurity concentration is the highest is etched and a recessed area 5 is formed. An interlayer insulating area 5 is formed so that metal 6 is covered. Thus, connection holes 7a are formed, and parasitic capacity can be reduced by forming the semiconductor element.
|
