| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with high reliability by providing an etching method which can supply added gas stably for a future period, has less problems of particles and no problem of the peeling of a side-wall protection film, and also has high shape control capability. SOLUTION: This method has a process of depositing a metal film containing aluminum on a semiconductor substrate, and a process of etching the metal film by using plasma of mixed gas of Cl2 gas, BCl3 gas, and CH2 Cl2 gas.
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