| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile memory in which stable information holding operation is realized with simple constitution. SOLUTION: This memory is a non-volatile memory performing electrically write-in operation and erasure operation of storage information, when write-in operation is performed for a threshold value of first distribution being adjacent to threshold voltage of an erasure state, first voltage is given to a selection word line, second voltage is given to a selection bit line and first write-in operation is performed, when such write-in operation is performed that the operation has threshold voltage being higher than threshold voltage of the first distribution basing threshold voltage of the erasure state as a reference, third voltage being higher than the first voltage is given to a selection word line, potential difference for a bit line is made larger than potential difference at write-in operation of threshold voltage of the first distribution, second write-in operation is performed, while a potential of a non-selection bit line at the time of the first write-in operation is made lower than that of the second write-in operation.</p> |
