METHOD AND DEVICE FOR GROWING CRYSTAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To grow a crystal which is uniform also in the peripheral portion of a substrate as is in its central portion. SOLUTION: This method for growing a crystal includes the steps of: arranging a substrate 5 and a dummy substrate 8 shaped like a doughnut outside the substrate 5 in a treatment space in a crystal growing device; setting various treatment conditions including the temperature and the degree of vacuum of the treatment space and the amount of supply of a treatment gas; supplying a predetermined gas into the treatment space to form a crystalline layer on the principal surface of the substrate; arranging a susceptor 9 having a groove 10 responding to the peripheral edge of the substrate and having a predetermined width in the treatment space; and arranging the substrate on the principal surface of the susceptor 9 such that the peripheral edge of the substrate is at the groove and the dummy substrate shaped like a doughnut to surround the substrate. A crystal is grown while the susceptor 9 is being turned. One layer or a plurality of layers made of a compound semiconductor is formed by a MOCVD method.